Atomic Layer Deposition (ALD)

Atomic Layer Deposition (ALD) is a thin film deposition technique that can be used for encapsulation in perovskite solar cells to improve their stability and performance. The process involves the sequential introduction of precursors that react with the surface of the material to form a thin film. The system includes RF-plasma up to 300W and four precursors available, for SnOx, Al2O3, TiO2 and ZnO.
X-Ray Diffraction (XRD)

RF-DC sputtering system

Surface Photovoltage Spectroscopy (SPV)

We use the surface photovoltage spectroscopy (SPV) in a capacitive arrangement to study the photo-induced charge separation and charge transport of materials of interest. SPV spectra provide information regarding type of semiconductor, on-set energy, direction of charge separation, and defect state below the band gap. Additionally, the SPV system comes along with a temperate-controlled unit that allows us to perform an in-situ heating measurements.
Atomic Force Microscope (AFM)

Electron-Beam Deposition (E-beam)

Thermal Evaporator

Nitrogen-Purged Glovebox

External Quantum Efficiency (EQE)

Sun Simulator

Low-Temp Electrical Measurement

Photo-luminescence (PL) setup

Time-Resolved PL setup

Mechanical Bending Test
